Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared by radio-frequency magnetron sputtering
Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared by radio-frequency magnetron sputtering
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DOI：
10.1063/1.365665
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发表时间：
1997-10
影响因子：
3.2
通讯作者：
M. Tsai;S. Sun;T. Tseng
中科院分区：
文献类型：
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作者：
M. Tsai;S. Sun;T. Tseng
采用射频磁控溅射法在Pt/SiO2/Si基片上制备了（Ba，Sr）TiO 3薄膜，研究了不同基片温度和O2/（Ar+O2）混合比（OMR）对薄膜生长的影响。薄膜的结晶度随着OMR的增加而显著提高。介电常数随着OMR的增加而增加，并在50%OMR时达到最大值。漏电流密度随氧流量的增加而减小，但在40%OMR时有一最小值。根据极化效应和损耗理论对介电常数和漏电流的结果进行了解释。在450 °C和50%OMR下沉积的膜表现出良好的表面形貌，并且具有375的介电常数，在100 kHz下的正切损耗为0.074，在100 kV/cm的电场和30 s的延迟时间下的漏电流密度为7.35×10−9 A/cm 2，在150 kV/cm的外加电场下，电荷存储密度为49 fC/μm2。10年寿命的时间相关的介电击穿研究表明，50%的OMR样品具有更长的寿命比。
Thin films of (Ba,Sr)TiO3 on Pt/SiO2/Si substrates were deposited using rf magnetron sputtering at various substrate temperatures and O2/(Ar+O2) mixing ratios (OMR). The crystallinity of the films improved significantly as the OMR increased. The dielectric constant increased with increasing OMR and reached a maximum value at 50% OMR. The leakage current density decreased with increasing oxygen flow, but had a minimum value at 40% OMR. The results for the dielectric constant and the leakage current were interpreted in terms of polarization effect and loss theory. The film deposited at 450 °C and 50% OMR exhibited good surface morphology and had a dielectric constant of 375, a tangent loss of 0.074 at 100 kHz, a leakage current density of 7.35×10−9 A/cm2 at an electric field of 100 kV/cm with a delay time of 30 s, and a charge storage density of 49 fC/μm2 at an applied field of 150 kV/cm. The 10 yr lifetime of time-dependent dielectric breakdown studies indicate that a 50% OMR sample has a longer lifetime t...