The Considerations of Improving TMCI Threshhold on HEPS Booster
The Considerations of Improving TMCI Threshhold on HEPS Booster
复制标题
DOI：
10.18429/jacow-ipac2018-tupmf063
复制
发表时间：
2018-06
期刊：
影响因子：
--
通讯作者：
Yuemei Peng;Jingyi Li;C. Meng;S. Pei;Haisheng Xu
中科院分区：
文献类型：
--
作者：
Yuemei Peng;Jingyi Li;C. Meng;S. Pei;Haisheng Xu
高能光子源（HEPS）在中国北京提出。存储环将采用轴上换出注入方案，主要是因为动态孔径较小。因此，升压器需要存储超过 2.5 nC 的束电荷。在此要求下，注入能量处的横模耦合不稳定性（TMCI）成为助推器中的束团电荷限制。考虑了升压器和直线加速器的一些变化，以提高受 TMCI 限制的束电荷阈值。详细内容将在本文中表述。
The High Energy Photon Source (HEPS) is proposed in Beijing, China. The on-axis swap-out injection scheme will be used in the storage ring mainly because of the small dynamic aperture. Therefore, the booster needs to store more than 2.5 nC bunch charge. Under this requirement, the transverse mode coupling instability (TMCI) at the injection energy becomes the bunch charge restriction in the booster. Several changes in booster and linac for improving bunch charge threshold limited by TMCI are considered. The details will be expressed in this paper.