The Effect of Drain/Gate Bias on Electromechanical Coupling Effect in Accelerometer Based on MESFET
The Effect of Drain/Gate Bias on Electromechanical Coupling Effect in Accelerometer Based on MESFET
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DOI：
10.1109/jsen.2010.2071379
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发表时间：
2011-02
影响因子：
4.3
通讯作者：
Zhongliang Liang;Shan Feng;Dongmei Zhao;Xuemin Shen
中科院分区：
文献类型：
--
作者：
Zhongliang Liang;Shan Feng;Dongmei Zhao;Xuemin Shen
本文报道了一种利用金属半导体场效应晶体管（MESFET）机电耦合效应的砷化镓微加速度计。MESFET作为敏感单元位于高应力区，用于检测应力作用下的纳米级变形。验证了机电耦合效应，同时采用静态和动态测试方法分析了不同电压偏置下的压阻效应和灵敏度，包括线性区、过渡区和饱和区。结果表明，微结构的压阻系数和灵敏度与电压偏置关系密切。饱和区和线性区之间的过渡区显示出更高的灵敏度和压阻系数。因此，基于MESFET的GaAs微结构可以通过优化栅极和漏极电压组合获得更高的压阻系数和灵敏度。
The paper reports a GaAs micro accelerometer by making use of the electromechanical coupling effect based on metal-semiconductor field effect transistor (MESFET). MESFET as a sensitive unit is located at high-stress region to detect the nanometers deformation under stress. The electromechanical coupling effect is validated, and at the same time, the piezoresistive effect and sensitivity, including linear, transition and saturation regions are analyzed under different voltage bias using static and dynamic testing methods. The results indicate that the piezoresistive coefficient and sensitivity of microstructure strongly depend on voltage bias. The transition region between the saturated and linear regions shows a greater sensitivity and piezoresistive coefficient. As a result, the GaAs microstructure based on MESFET can obtain higher piezoresistive coefficient and sensitivity by optimizing the combination of gate and drain voltage.