Minimum emitter charging time for heterojunction bipolar transistors

Minimum emitter charging time for heterojunction bipolar transistors
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DOI：
10.1109/iciprm.2006.1634181
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发表时间：
2006-06
期刊：
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
影响因子：
--
通讯作者：
N. Machida;Y. Miyamoto;K. Furuya
N. Machida;Y. Miyamoto;K. Furuya
中科院分区：
其他
文献类型：
--
作者：
N. Machida;Y. Miyamoto;K. Furuya

文献摘要

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基于传输形式，推导了具有单一n+掺杂发射极层的异质结双极晶体管的最小发射极充电时间。所得到的最小充电时间几乎等于使用TCAD软件的电荷控制分析。由于基于该理论的计算时间很短，因此大大简化了发射极的设计过程
The minimum emitter charging time for heterojunction bipolar transistors with a single n+ doped emitter layer was derived on the basis of transmission formalism. The obtained minimum charging time is almost equal to that from charge-control analysis using TCAD software. Since the calculation time based on our theory is very short, the process of emitter design is significantly simplified