On the phase transition of chalcocite Cu2S thin films
On the phase transition of chalcocite Cu2S thin films
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DOI:
10.1002/pssa.2210670138
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发表时间:
1981-09
期刊:
影响因子:
--
通讯作者:
M. León;N. Terao;F. Rueda
中科院分区:
文献类型:
--
作者:
M. León;N. Terao;F. Rueda
The phase transitions of chalcocite have been studied in bulk material by Buerger and Buerger/1/by X-ray diffraction. A transition was observed from orthorhombic chalcocite to hexagonal at 105 OC, having the lattice constants a= 11. 90 8, b= 2 7.28 8, c= 1 3.41'A, and a= 3.89 1, c= 6.68 8 for the orthorhombic and hexagonal phases, respectively. Rastogi and coworkers/2/have studied by electron diffraction and electrical conductivity the phase transitions of thin films obtained by evaporation in vacuum. They observed a phase transition at 57 OC from orthorhombic chalcocite to the hexagonal form. Evans/3/has shown that the low-temperature phase is monoclinic with lattice constants a= 15.246 1, b= 11.884 x, c= 13.494 8, fi= 116.35'.The present work complements the observations of the previous authors and shows in particular that for chalcocite thin films obtained by vacuum evaporation of cuprous sulphide CuxS (1.75< x< 2) and posterior thermal annealing in vacuum, the transition hexagonal-monoclinic in single crystal follows a topotactic relation where the low-temperature phase takes a superstructure having as basic structure that of the high-temperature phase. The transformation matrix was determined.