Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L10-FePt Films via Nonelectrically Controlled Strain Engineering.
Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L10-FePt Films via Nonelectrically Controlled Strain Engineering.
复制标题
DOI：
10.1021/acsami.5b12699
复制
发表时间：
2016-03
影响因子：
9.5
通讯作者：
C. Feng;Jiancheng Zhao;Feng Yang;S. Hao;Kui Gong;Di Hu;Yi Cao;Xumin Jiang;Zhongqiang Wang-Zhongqiang-W
中科院分区：
文献类型：
--
作者：
C. Feng;Jiancheng Zhao;Feng Yang;S. Hao;Kui Gong;Di Hu;Yi Cao;Xumin Jiang;Zhongqiang Wang-Zhongqiang-W
铁磁材料磁化开关特性的可逆非易失性调制是研制低功耗自旋电子器件的关键。最近发现应变工程可以作为一种积极而有效的方法来调节薄膜的磁/输运性质。应变调制的主要方法是通过铁电材料的逆压电效应，由于所需电场的依赖，铁电材料的逆压电效应通常是不稳定的。铁电材料的最大变形量通常被限制在1%以下，引入铁磁薄膜的相应磁弹性应变能约为10(4)J/m(3)，不足以克服许多材料中的磁晶各向异性能(Ku)。与传统的应变诱导衬底不同，本文报道了使用非电控形状记忆合金衬底的L10-FePT薄膜中显著大的、可逆的和不挥发的晶格应变(高达2.18%)。引入足够大的晶格应变可以有效地影响FePT中的磁畴结构和磁反转。结果表明，样品的矫顽场显著降低了80%。此外，由于形状记忆效应的特性，使用这种衬底的矫顽场的可调性在室温下是非易失性的，并且是可逆的。这一发现为发展应变辅助自旋电子器件提供了一条有效的途径，如逻辑存储器件、磁阻随机存取存储器和忆阻器。
Reversible and nonvolatile modulation of magnetization switching characteristic in ferromagnetic materials is crucial in developing spintronic devices with low power consumption. It is recently discovered that strain engineering can be an active and effective approach in tuning the magnetic/transport properties of thin films. The primary method in strain modulation is via the converse piezoelectric effect of ferroelectrics, which is usually volatile due to the reliance of the required electric field. Also the maximum amount of deformation in ferroelectrics is usually limited to be less than 1%, and the corresponding magnetoelastic strain energy introduced to ferromagnetic films is on the order of 10(4) J/m(3), not enough to overcome magnetocrystalline anisotropy energy (Ku) in many materials. Different from using conventional strain inducing substrates, this paper reports on the significantly large, reversible, and nonvolatile lattice strain in the L10-FePt films (up to 2.18%) using nonelectrically controlled shape memory alloy substrates. Introduced lattice strain can be large enough to effectively affect domain structure and magnetic reversal in FePt. A noticeable decrease of coercivity field by 80% is observed. Moreover, the coercivity field tunability using such substrates is nonvolatile at room temperature and is also reversible due to the characteristics of the shape memory effect. This finding provides an efficient avenue for developing strain assisted spintronic devices such as logic memory device, magnetoresistive random-access memory, and memristor.