Schottky x-ray detectors based on a bulk β-Ga2O3 substrate
Schottky x-ray detectors based on a bulk β-Ga2O3 substrate
复制标题
基于块状 β-Ga2O3 基板的肖特基 X 射线探测器
DOI：
10.1063/1.5020178
复制
发表时间：
2018-03-05
影响因子：
4
通讯作者：
Tang, Huili
中科院分区：
文献类型：
--
作者：
Lu, Xing;Zhou, Leidang;Tang, Huili
beta-Ga2O3 Schottky barrier diodes (SBDs) have been fabricated on a bulk (100) beta-Ga2O3 substrate and tested as X-ray detectors in this study. The devices exhibited good rectification properties, such as a high rectification ratio and a close-to-unity ideality factor. A high photo-to-dark current ratio exceeding 800 was achieved for X-ray detection, which was mainly attributed to the low reverse leakage current in the beta-Ga2O3 SBDs. Furthermore, transient response of the beta-Ga2O3 X-ray detectors was investigated, and two different detection mechanisms, photovoltaic and photoconductive, were identified. The results imply the great potential of beta-Ga2O3 based devices for X-ray detection. Published by AIP Publishing.
