Phase evolution of MgB2 prepared under high pressure
Phase evolution of MgB2 prepared under high pressure
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高压制备MgB2的相演化
DOI：
10.1154/1.3010311
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发表时间：
2008-12
影响因子：
0.5
通讯作者：
中科院分区：
文献类型：
--
作者：
以纯Mg和B为原料，在高温高压条件下合成了MgB 2超导体。利用X射线衍射（XRD）、扫描电镜（SEM）和直流磁化技术研究了压力和温度等实验条件对相演变的影响。结果表明，高压和高温是合成MgB 2相的两个重要因素。稳定的MgB 2可以在3至6 GPa的压力-温度范围内以及Mg的熔点高达1100至1300 °C之间最有效地获得。MgB 2在较高的温度和压力下开始分解成MgB 4。MgB 2的分解温度随着压力的增加而增加。在900 ~ 1000 °C、3GPa下制备的MgB 2的超导转变温度Tc（体相）为38.0 ~ 38.8K。较大的晶粒和较好的结晶完整性有助于较高的Tc（体）和较窄的ΔT。
MgB2 superconductors were synthesized at high pressure and high temperature (HPHT) using pure Mg and B as raw materials. The effects of the experimental conditions such as pressure and temperature on phase evolution were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), and DC magnetization techniques. Results showed that high pressure and high temperature are two important factors for synthesizing the MgB2 phase. Stable MgB2 can be most effectively obtained in a pressure-temperature region from 3 to 6 GPa and between the melting points of Mg up to 1100 to 1300 °C. MgB2 starts to decompose into MgB4 at higher temperatures and pressures. The decomposition temperature of MgB2 increases with increasing pressure. The superconducting transition temperature Tc(bulk) was measured to be 38.0 to 38.8 K for MgB2 prepared at 900 to 1000 °C under 3 GPa. The larger grains and better crystalline perfection contribute to the higher Tc(bulk) and the narrower ΔT.
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影响因子：
3.7
作者：
Errandonea, D;Boehler, R;Ross, M
通讯作者：
Ross, M
影响因子：
4
作者：
Giovanni Grasso;A. Malagoli;C. Ferdeghini;S. Roncallo;V. Braccini;A. Siri;M. R. Cimberle
通讯作者：
Giovanni Grasso;A. Malagoli;C. Ferdeghini;S. Roncallo;V. Braccini;A. Siri;M. R. Cimberle
影响因子：
6.2
作者：
S. Yan;G. Yan;Changsheng Liu;Yafeng Lu;Lian Zhou
通讯作者：
S. Yan;G. Yan;Changsheng Liu;Yafeng Lu;Lian Zhou
影响因子：
3.6
作者：
A. Yamamoto;J. Shimoyama;S. Ueda;Y. Katsura;S. Horii;K. Kishio
通讯作者：
A. Yamamoto;J. Shimoyama;S. Ueda;Y. Katsura;S. Horii;K. Kishio
影响因子：
6.2
作者：
Q. Shi;Y. Liu;Qian Zhao;Zongqing Ma
通讯作者：
Q. Shi;Y. Liu;Qian Zhao;Zongqing Ma