Weak antilocalization in high mobility GaxIn1-xAs/InP two-dimensional electron gases with strong spin-orbit coupling
Weak antilocalization in high mobility GaxIn1-xAs/InP two-dimensional electron gases with strong spin-orbit coupling
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DOI：
10.1103/physrevb.76.165301
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发表时间：
2007-10-01
影响因子：
3.7
通讯作者：
Hardtdegen, Hilde
中科院分区：
文献类型：
--
作者：
Guzenko, Vitaliy A.;Schapers, Thomas;Hardtdegen, Hilde
研究了GaInAs/InP异质结中高迁移率二维电子气的自旋轨道相互作用随栅压和温度的变化。高灵敏度的磁输运测量弱反局域化以及测量的Shubnikov-de哈斯振荡进行了广泛的电子片浓度。在我们的样品中，电子输运发生在强自旋旋进制度在整个范围内施加的栅极电压，Rashba自旋轨道耦合参数的大小是根据Golub最近提出的模型通过模拟量子电导修正拟合实验曲线确定的。Phys. Rev. B 71，235310（2005）]。使用该模型提取的Rashba耦合参数与从Shubnikov-de哈斯振荡中的拍频模式的分析中估计的值的比较显示出良好的一致性。
We have studied the spin-orbit interaction in a high mobility two-dimensional electron gas in a GaInAs/InP heterostructure as a function of an applied gate voltage as well as a function of temperature. Highly sensitive magnetotransport measurements of weak antilocalization as well as measurements of Shubnikov-de Haas oscillations were performed in a wide range of electron sheet concentrations. In our samples, the electron transport takes place in the strong spin precession regime in the whole range of applied gate voltages, which is characterized by the spin precession length being shorter than the elastic mean free path. The magnitude of the Rashba spin-orbit coupling parameter was determined by fitting the experimental curves by a simulated quantum conductance correction according to a model proposed recently by Golub [Phys. Rev. B 71, 235310 (2005)]. A comparison of the Rashba coupling parameter extracted using this model with the values estimated from the analysis of the beating pattern in the Shubnikov-de Haas oscillations showed a good agreement.