Verilog-A based compact modeling of the magneto-electric FET device
Verilog-A based compact modeling of the magneto-electric FET device
复制标题
基于 Verilog-A 的磁电 FET 器件紧凑建模
DOI：
10.1109/e3s.2017.8246186
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
P. Dowben
中科院分区：
文献类型：
--
作者：
Nishtha Sharma;A. Marshall;Jonathan P. Bird;P. Dowben
第一个自旋晶体管是由Das和Datta在1990年提出的[1]。从那时起，学术界和工业界对自旋晶体管进行了大量的研究。器件结构类似于CMOS晶体管，其源极和漏极分别用作自旋极化器和自旋检测器。施加在栅极两端的电压通过由自旋轨道相关的Rashba效应产生的电场来控制沟道中的自旋进动。这导致代表器件状态变量的漏极到源极（IDS）电流的幅度变化。以前，已经提出了基于Verilog-A的模型用于基于Rashba效应的SpinFET晶体管[2-3]。不幸的是，Rashba效应很弱，使得难以实现有效的室温Datta-Das晶体管。
The first spin transistor was proposed by Das and Datta in 1990 [1]. Since then, there has been a lot of active research on the spin based transistors in the academia and industry. The device structure resembles a CMOS transistor with the source and drain acting as a spin polarizer and spin detector respectively. The voltage applied across the gate controls the spin precession in the channel through electric field generated by spin orbit dependent Rashba effect. This results in magnitude change of the drain to source (IDS) current which represents the state variable of the device. Previously, Verilog-A based models have been proposed for the Rashba effect based SpinFET transistors [2-3]. Unfortunately, the Rashba effect is weak making it difficult for the realization of an effective room temperature Datta-Das transistor.