Manipulating the metal-to-insulator transition and magnetic properties in manganite thin films via epitaxial strain
Manipulating the metal-to-insulator transition and magnetic properties in manganite thin films via epitaxial strain
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DOI：
10.1103/physrevb.105.165426
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发表时间：
2022-04-22
影响因子：
3.7
通讯作者：
Li, Weiwei
中科院分区：
文献类型：
--
作者：
Li, Dong;Zhu, Bonan;Li, Weiwei
外延过渡金属氧化物异质结构的应变工程提供了一个有趣的机会，通过修改自旋，电荷，轨道和晶格自由度之间的相互作用来控制电子结构。在这里，我们证明了La 0.9Ba 0.1MnO 3薄膜的电子结构，磁性和输运性质可以有效地控制外延应变。光谱研究和第一性原理计算表明，Mn的e（g）轨道的轨道占有率可以通过改变应变从压缩到拉伸而从d（3 z2-r2）轨道转换到d（x2-y2）轨道.与Mn 3d-O 2 p杂化相关的轨道占据的变化导致应变La 0.9Ba 0.1MnO 3薄膜的磁性和电子性质的显著调制。在适度的拉伸应变下，一个新兴的铁磁绝缘态与增强的铁磁居里温度为215 K。这些发现不仅加深了我们对La0.9Ba0.1MnO3系统的电子结构、磁性和输运性质的理解，而且还证明了使用外延应变作为一种有效的旋钮来调节电子结构和相关的物理性质，以用于潜在的自旋电子器件应用。
Strain engineering of epitaxial transition metal oxide heterostructures offers an intriguing opportunity to control electronic structures by modifying the interplay between spin, charge, orbital, and lattice degrees of freedom. Here, we demonstrate that the electronic structure, magnetic and transport properties of La0.9Ba0.1MnO3 thin films can be effectively controlled by epitaxial strain. Spectroscopic studies and first-principles calculations reveal that the orbital occupancy in Mn e(g) orbitals can be switched from the d(3z2-r2) orbital to the d(x2-y2) orbital by varying the strain from compressive to tensile. The change of orbital occupancy associated with Mn 3d-O 2p hybridization leads to dramatic modulation of the magnetic and electronic properties of strained La0.9Ba0.1MnO3 thin films. Under moderate tensile strain, an emergent ferromagnetic insulating state with an enhanced ferromagnetic Curie temperature of 215 K is achieved. These findings not only deepen our understanding of electronic structures, magnetic and transport properties in the La0.9Ba0.1MnO3 system, but also demonstrate the use of epitaxial strain as an effective knob to tune the electronic structures and related physical properties for potential spintronic device applications.