The effect of temperature on Bi2Se3 nanostructures synthesized via chemical vapor deposition
The effect of temperature on Bi2Se3 nanostructures synthesized via chemical vapor deposition
复制标题
温度对化学气相沉积合成 Bi2Se3 纳米结构的影响
DOI：
10.1007/s10854-015-2915-5
复制
发表时间：
2015-06-01
影响因子：
2.8
通讯作者：
Man, Baoyuan
中科院分区：
文献类型：
--
作者：
Liu, Fuyan;Liu, Mei;Man, Baoyuan
硒化铋（Bi2Se3）纳米结构是通过化学气相沉积在不同温度下合成的。为了减少Bi2Se3中的Se空位，采用超纯Bi2Se3与Se粉源混合以提供充足的硒气氛。采用XRD、SEM、EDX、HRTEM、SAED和Raman等手段对温度对产物的结晶、组成、形貌进行了表征。结果表明，在我们的实验条件下，500°C 沉积的 Bi2Se3 纳米结构得到了优化。同时，为合成Bi2Se3纳米结构提供了证据，更有利于研究奇异的表面态及其在自旋电子学中的潜在应用。
Bismuth selenide (Bi2Se3) nanostructures have been synthesized via chemical vapor deposition at different temperatures. In order to reduce the Se vacancy in Bi2Se3, the ultrapure Bi2Se3 mixed with the Se powder source is used to supply a sufficient selenium atmosphere. The crystallization, composition, morphology of the products effected by temperature were characterized by XRD, SEM, EDX, HRTEM, SAED and Raman. The results show that the nanostructures of Bi2Se3 deposited at 500 °C is optimized in our experimental conditions. Meanwhile, it provided an evidence to synthesize Bi2Se3 nanostructures, which is more advantageous to investigate the exotic surface states and potential applications in spintronics.