MONITORING OF ISFET ENCAPSULATION AGING BY IMPEDANCE MEASUREMENTS
MONITORING OF ISFET ENCAPSULATION AGING BY IMPEDANCE MEASUREMENTS
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DOI：
10.1016/0925-4005(91)85006-5
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发表时间：
1991-01-01
影响因子：
8.4
通讯作者：
PEDONE, D
中科院分区：
文献类型：
--
作者：
CHOVELON, JM;JAFFREZICRENAULT, N;PEDONE, D
尽管在过去十年中对 ISFET 进行了大量研究，但仍有几个问题尚未解决，特别是有关其封装的问题。这里提出的方法可以监测电解质-绝缘体-半导体膜老化和总 ISFET 老化。 它由恒电位模式下的阻抗测量组成。结果表明 EIS 结构的行为符合理论模型；未发现绝缘体（SiO2、Al2O3、SiO(x)N(y)H(z)）与溶液接触时发生劣化。 在 pH Al2O3 ISFET 完全恶化（pH 响应消失）之前，观察到三个阶段。 首先，封装材料是完美的，因此结果由奈奎斯特表示中的纯电容直线组成。 在第二阶段，当发生吸水时，出现半圆，表明包装材料的电阻率下降。 随后出现指示电荷转移的第二个半圆。
Although much research has been done on ISFETs during the last decade, several problems remain unresolved, especially concerning their encapsulation.The method proposed here allows electrolyte-insulator-semiconductor membrane aging and total ISFET aging to be monitored. It consists of impedance measurements in a potentiostatic mode.The results show that the EIS structure behaves in accordance with a theoretical model; no deterioration of the insulator (SiO2, Al2O3, SiO(x)N(y)H(z)) in contact with solution is seen. Three stages are observed before a pH Al2O3 ISFET deteriorates completely (disappearance of the pH response). First, the packaging material is perfect, so that the results consist of a purely capacitance straight line in the Nyquist representation. In the second stage, when uptake of water takes place, a semicircle appears, indicating that the resistivity of the packaging material decreases. Subsequently a second semicircle indicating charge transfer appears.