Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells
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总电离剂量对 41 nm NAND 闪存单元保留的影响
DOI：
10.1109/tns.2011.2171505
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发表时间：
2011
影响因子：
1.8
通讯作者：
L. T. Czeppel
中科院分区：
文献类型：
--
作者：
M. Bagatin;S. Gerardin;A. Paccagnella;A. Visconti;S. Beltrami;M. Bertuccio;L. T. Czeppel
在太空中运行的闪存同时会受到总电离剂量的逐渐积累和固有老化现象的影响。在这项工作中，我们研究了 41 nm NAND 单级单元中的潜在总电离剂量 (TID) 效应，该单元在暴露后既不显示浮动栅极错误，也不显示任何明显的退化。在室温和高温下分析受照射细胞的保留量作为先前接收的总剂量的函数。我们发现，在总剂量达到 30 krad(Si) 后，FG 细胞在室温下的保留实际上没有变化。相反，TID 暴露会稍微恶化高温测试期间的细胞保留时间。我们将此行为归因于高温下隧道氧化物中补偿电子的去除。
Flash memories operating in space are subject at the same time to the progressive accumulation of total ionizing dose and to intrinsic aging phenomena. In this work we investigate latent Total Ionizing Dose (TID) effects in 41-nm NAND single level cells that do not display neither floating gate errors nor any apparent kind of degradation after exposure. Retention of irradiated cells is analyzed at room and high temperature as a function of total dose previously received. We found that FG cell retention at room temperature is practically unchanged after a total dose up to 30 krad(Si). On the contrary, TID exposure slightly worsens the cell retention time during high-temperature tests. We attribute this behavior to the removal of compensating electrons from the tunnel oxide at high temperature.