Porous-pyramids structured silicon surface with low reflectance over a broad band by electrochemical etching
Porous-pyramids structured silicon surface with low reflectance over a broad band by electrochemical etching
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DOI：
10.1016/j.apsusc.2012.02.033
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发表时间：
2012-05-01
影响因子：
6.7
通讯作者：
Yuan, Jiren
中科院分区：
文献类型：
--
作者：
Lv, Hongjie;Shen, Honglie;Yuan, Jiren
制备了多孔金字塔结构的硅表面并研究了其对硅表面反射率的影响。在 NaOH/IPA 溶液中织构化后，通过在 HF/C2H5OH 溶液中进行电化学蚀刻来制备多孔金字塔结构表面。表面在400-800 nm范围内的平均反射率低至1.9%。研究了在优化条件下制备的表面的光学照片和SEM图像。多孔金字塔结构表面具有梯度折射率多层结构（即结构的折射率从顶部到底部增加）。使用描述反射率和折射率之间关系的公式来解释多层硅表面优异的宽带抗反射性能。本文的技术在高效硅太阳能电池的织构化过程中可能具有价值。 (C) 2012 Elsevier B.V. 保留所有权利。
Porous-pyramids structured silicon surface was prepared and its influence on the reflectance of the silicon surface was studied. The porous-pyramids structured surface was prepared by electrochemical etching in HF/C2H5OH solution after texturization in NaOH/IPA solution. The average reflectance of the surface in the range of 400-800 nm was as low as 1.9%. The optical photographs and SEM images of the surfaces prepared under optimized condition were investigated. The porous-pyramids structured surface has a gradient-index multilayer structure (i.e., the refraction index of the structure increase from the top to the bottom). A formula that describes the relationship between the reflectance and the index of refraction was used to explain the excellent broadband antireflection of the multilayer silicon surface. The technique of this paper may be valuable in the texturization process for high-efficiency silicon solar cells. (C) 2012 Elsevier B. V. All rights reserved.