Thick-Film Barium-Strontium-Titantate varactors for RF power transistors
Thick-Film Barium-Strontium-Titantate varactors for RF power transistors
复制标题
用于射频功率晶体管的厚膜钛酸钡锶变容器
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
R. Jakoby
中科院分区：
文献类型：
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作者：
A. Wiens;O. Bengtsson;H. Maune;M. Sazegar;W. Heinrich;R. Jakoby
这项工作解决了钡锶钛基厚膜变容管的性能，预期会出现的条件下，当变容管集成在一个封装的RF功率晶体管，即变化的热条件结合大的字段和大于30 dBm的高功率。变容二极管的特点是在一个小信号和大信号的环境中，在很宽的温度范围。一个相当大的热依赖性被发现，其对可调预匹配晶体管组件的影响进行了研究。在40摄氏度的温度升高下，与非预匹配GaN相比，预匹配并联变容二极管将增益偏移从1.0dB增加到1.3dB。考虑到设计中的这些效应，可以利用变容二极管偏置电压完全重新调谐附加偏移，以重新建立GaN-HEMT的增益。
This work addresses the properties of Barium-Strontium-Titanate based thick-film varactors at conditions that are expected to arise when the varactors are integrated in a packaged RF power transistor i.e. varying thermal conditions in combination with large fields and high power larger than 30dBm. The varactors are characterized in a small- and large-signal environment in a wide temperature range. A considerable thermal dependency is found and its effect on a tunable pre-matching transistor assembly is investigated. At a 40 degree Celsius temperature increase, the pre-matching shunt varactor increases the gain shift from 1.0dB up to 1.3dB compared to a non pre-matched GaN. Considering these effects in the design, the additional shift can be fully re-tuned with the varactor bias voltage to re-establish the gain of the GaN-HEMT.