Post growth annaling of CdTe layers grown on Si substartes by metalorganic vapor phase epitaxy
Post growth annaling of CdTe layers grown on Si substartes by metalorganic vapor phase epitaxy
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通过金属有机气相外延在 Si 基底上生长的 CdTe 层的后生长退火
DOI：
10.1007/s11664-013-2680-2
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
et al.
中科院分区：
文献类型：
--
作者：
K.Yasuda;M.Niraula;S.Namba;et al.
研究了金属有机气相外延法在Si衬底上生长CdTe薄膜的退火条件。通常，在3 μm厚的（211）CdTe层表面覆盖大块CdTe晶片，在常压下在流动的氢气中退火60 s。在700℃以上的退火温度下，双晶岩石曲线测量和x射线衍射测量的全宽半最大值证实了晶体质量的改善。光致发光测量显示，退火后的n- cdte层的电性能没有恶化。此外，900℃退火可以改善p-like CdTe/n-CdTe/n+-Si衬底结构的辐射探测器的性能。
Annealing conditions of CdTe layers grown on Si substrates by metalorganic vapor-phase epitaxy were studied. Typically, 3-μm-thickn-type (211) CdTe layers were annealed for 60 s in flowing hydrogen at atmospheric pressure by covering their surfaces with bulk CdTe wafers. At annealing temperatures above 700°C, improvement of crystal quality was confirmed from full-width at half-maximum values of double-crystal rocking-curve measurements and x-ray diffraction measurements. Photoluminescence measurements revealed no deterioration of electrical properties in the annealedn-CdTe layers. Furthermore, annealing at 900°C improved the performance of radiation detectors with structure ofp-like CdTe/n-CdTe/n+-Si substrate.