Temperature-Dependent Characteristics of Cylindrical Gate-All-Around Twin Silicon Nanowire MOSFETs (TSNWFETs)
Temperature-Dependent Characteristics of Cylindrical Gate-All-Around Twin Silicon Nanowire MOSFETs (TSNWFETs)
复制标题
圆柱形栅极全包围双硅纳米线 MOSFET (TSNWFET) 的温度相关特性
DOI：
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发表时间：
2007
影响因子：
4.9
通讯作者：
S. Hwang
中科院分区：
文献类型：
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作者：
K. Cho;S. Suk;Y. Yeoh;Ming Li;K. Yeo;Dong;Donggun Park;Wonshik Lee;Y. Jung;B. Hong;S. Hwang
在4 ~ 300 K的温度范围内，测量了半径为5nm的圆柱栅全能双硅纳米线场效应晶体管的特性。关断电流的依赖性表明通道内的热产生是主要的泄漏机制。亚阈值摆动的依赖性没有显示出体效应，但由于双纳米线的阈值电压和体效应常数的微小差异而显示出衰减。峰归一化跨导gm /VDS的T依赖性给出了一维声子散射的线索，表明在低值时，纳米线壁面表面粗糙度散射占主导地位。
The characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with a radius of 5 nm have been measured in temperatures T ranging from 4 to 300 K. The dependence of the off-current suggests that thermal generation in the channel is the main leakage mechanism. The dependence of the subthreshold swing exhibits no body effects but shows degradations due to slight differences in the threshold voltages and in the body effect constants of the twin nanowires. The T dependence of the peak normalized transconductance gm /VDS gives a clue of 1-D phonon scattering and suggests that surface roughness scattering at the nanowire wall is dominant at low values.