Modelling frequency dependence of output impedance of a microwave MESFET at low frequencies

Modelling frequency dependence of output impedance of a microwave MESFET at low frequencies
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DOI:
10.1049/el:19850373
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发表时间:
1985-06
影响因子:
1.1
通讯作者:
C. Camacho-Peñalosa;C. Aitchison
C. Camacho-Peñalosa;C. Aitchison
中科院分区:
工程技术4区
文献类型:
--
作者:
C. Camacho-Peñalosa;C. Aitchison

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测量了MESFET漏阻抗在低频下的频率依赖性。文中还提出了一个模拟这一行为的简单模型。
Measurements showing the frequency dependence of MESFET drain impedance at low frequencies have been performed. A simple model which simulates this behaviour is also proposed.