Rashba spin splitting in biased semiconductor quantum wells
Rashba spin splitting in biased semiconductor quantum wells
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DOI：
10.1103/physrevb.73.113303
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发表时间：
2005-12
影响因子：
3.7
通讯作者：
Wen Yang;Kai Chang
中科院分区：
文献类型：
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作者：
Wen Yang;Kai Chang
基于八能带k中心点p理论，从理论上研究了偏置半导体量子阱中的Rashba自旋分裂。我们发现，与广泛使用的各向同性线性模型相比，在大波矢下，RSS作为面内波矢的函数是非单调的和各向异性的。我们得到了RSS的一个解析表达式，它可以定性地再现这种在大波矢下的非单调行为。我们还数值研究了RSS对各种能带参数的依赖关系，发现RSS随着带隙和子带折射率的减小、价带偏移的增加、外加电场和势垒宽度的增加而增加。所有这些依赖关系都可以用我们的分析模型进行定性描述。
Rashba spin splitting (RSS) in biased semiconductor quantum wells is investigated theoretically based on eight-band k center dot p theory. We find that at large wave vectors, RSS is both nonmonotonic and anisotropic as a function of in-plane wave vector, in contrast to the widely used isotropic linear model. We derive an analytical expression for RSS, which can qualitatively reproduce such nonmonotonic behavior at large wave vectors. We also investigate numerically the dependence of RSS on the various band parameters and find that RSS increases with decreasing band gap and subband index, increasing valence band offset, external electric field, and well width. All these dependences can be qualitatively described by our analytical model.