Silicon and germanium nanoparticle formation in an inductively coupled plasma reactor
Silicon and germanium nanoparticle formation in an inductively coupled plasma reactor
复制标题
电感耦合等离子体反应器中硅和锗纳米颗粒的形成
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
Yicheng Lu
中科院分区：
文献类型：
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作者：
C. Gorla;S. Liang;G. Tompa;W. Mayo;Yicheng Lu
我们研究了螺旋谐振器型电感耦合等离子体反应器中产生的 SiH4-Ar 等离子体放电中 Si 纳米颗粒的形成。观察到，在不同条件下，Si 颗粒的尺寸在 5 至 15 nm 之间变化。这些颗粒大多呈球形，由结晶核和 1-2 nm 厚的无定形壳组成。对于在 200 mTorr 压力、400 W 等离子体功率和 20 sccm (+980 sccm Ar) 硅烷流量下形成的颗粒，尺寸分布较窄。还研究了施加到粒子收集网格的直流偏压的影响。研究发现，对用于颗粒收集的网格施加负偏压（-25 至 -100 V）会导致收集的 Si 纳米颗粒数量大幅增加，而正偏压不会显着改变收集效率，表明颗粒带正电。在非常低的流速和高等离子体功率下，硅颗粒密度显着降低，并且沉积成薄膜状...
We have studied the formation of Si nanoparticles in a SiH4–Ar plasma discharge generated in a helical resonator type inductively coupled plasma reactor. It is observed that Si particles vary in sizes from 5 to 15 nm under different conditions. The particles were mostly spherical and made up of a crystalline core with a 1–2 nm thick amorphous shell. The size distribution was narrow for particles formed at a pressure of 200 mTorr, plasma power of 400 W and silane flow rate of 20 sccm (+980 sccm Ar). The effect of a dc bias applied to the particle collecting grids has also been studied. It is found that a negative bias (−25 to −100 V) applied to the grids used for particle collection results in a large increase in the number of Si nanoparticles collected, while a positive bias does not change the collection efficiency considerably, suggesting that the particles are positively charged. Under very low flow rates and under high plasma powers, the Si particle density decreases considerably and a film like depos...