Resonant Coherent Excitation of Hydrogen-Like Ar Ions to the n = 3 States
Resonant Coherent Excitation of Hydrogen-Like Ar Ions to the n = 3 States
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类氢 Ar 离子共振相干激发至 n = 3 态
DOI：
10.1238/physica.topical.092a00061
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
T. Murakami
中科院分区：
文献类型：
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作者：
T. Azuma;T. Ito;Y. Takabayashi;K. Komaki;Y. Yamazaki;E. Takada;T. Murakami
通过测量硅晶体中传输离子的电荷态分布，我们成功地观测到了390 MeV/u类氢Ar17+离子在硅晶体中平面沟道中1s电子到n=3能级的共振相干激子。此外，我们还通过观察去激发X射线，即共振条件下的K-βX射线的增强，直接证实了RCE为n=3态。与跃迁能唯一相关的电荷态分布随入射角变化的共振轮廓具有由多个峰组成的特征结构。与RCE到n=2能级的轮廓相比，在真空中从j=1/2能级和3/2能级有较大的峰值漂移，并且由于晶体中依赖位置的强静电场(与平面通道中沟道中心的距离)，该轮廓比n=3流形的Stark分裂能级结构所预期的轮廓宽得多。
We have succeeded in observing resonant coherent excitaion (RCE) of 1s electrons to the n = 3 states in 390 MeV/u hydrogen-like Ar17+ ions planar channeled in a silicon crystal through measurements of the charge-state distribution of ions transmitting the crystal. Furthermore, we directly confirmed RCE to the n = 3 states by observing the enhancement of the de-excitation X-rays, i.e., Kβ X-rays under the resonance condition. The resonance profiles of the charge-state distribution as functions of the incident angle to the crystal, which uniquely relates with the transition energy, have a characteristic structure consisting of several peaks. Compared with the profile of RCE to the n = 2 states, the present profiles show a large peak shift from the j = 1/2 and 3/2 levels in vacuum, and the profiles are much wider than those expected from the Stark-split level structure of the n = 3 manifolds due to the position- (distance from the channel center in the planar channel) dependent strong static field in the crystal.