Intrinsic resistive switching and memory effects in silicon oxide
Intrinsic resistive switching and memory effects in silicon oxide
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DOI：
10.1007/s00339-011-6267-6
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发表时间：
2011-01
期刊：
影响因子：
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通讯作者：
Jun Yao;L. Zhong;D. Natelson;J. Tour
中科院分区：
文献类型：
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作者：
Jun Yao;L. Zhong;D. Natelson;J. Tour
在采用垂直E/SiOx/E（E表示电极）结构的氧化硅（SiOx）系统中描述了电阻切换行为。开关在很大程度上是独立的电极材料，并归因于本征性质的SiOx。基于最近的实验观察（Yao等人，Nano Lett. 10：4105，2010），我们进一步根据所测量的电现象讨论了开关机制。设置电压在很大程度上是SiOx厚度独立的，与硅灯丝中的点切换的机械图一致。多状态切换和设置电压相对于复位电压的偏移与切换位点处的电化学氧化还原过程（Si ParticleSiOy）一致。
Resistive switching behaviors are described in silicon oxide (SiOx) systems employing vertical E/SiOx/E (E denotes the electrode) structures. The switching is largely independent of the electrode material and attributed to the intrinsic properties of SiOx. Based on the recent experimental observation (Yao et al. in Nano Lett. 10:4105, 2010) of a silicon filament embedded in the SiOxmatrix, we further discuss the switching mechanism in light of the measured electrical phenomena. The set voltages are largely SiOx-thickness independent, consistent with the mechanistic picture of point switching in the silicon filament. The multi-state switching and shifts in the set voltages with respect to the reset voltages are consistent with an electrochemical redox process (Si ↔ SiOy) at the switching site.