Raman study of amorphous to microcrystalline phase transition in cw laser annealed a‐Si:H films
Raman study of amorphous to microcrystalline phase transition in cw laser annealed a‐Si:H films
复制标题
DOI：
10.1063/1.343723
复制
发表时间：
1989-12
影响因子：
3.2
通讯作者：
H. Mavi;A. Shukla;S. C. Abbi;K. Jain
中科院分区：
文献类型：
--
作者：
H. Mavi;A. Shukla;S. C. Abbi;K. Jain
利用光散射技术研究了石英衬底上a-Si：H薄膜连续激光诱导晶化的动力学行为。尺寸小于30 A的微晶可以在稳定状态下生长，并且证明了表面体积校正对于估计类堆叠模式的频率是必不可少的。这表明，体诱导结晶可能是形成非常小的微晶的原因。
The dynamic behavior of continuous wave (cw) laser‐induced crystallization in the a‐Si:H film on a quartz substrate is studied by light scattering. Microcrystals of dimensions less than 30 A could be grown in a stable state and it is demonstrated that the surface‐to‐volume correction is essential for estimating the frequency of the crystallinelike mode. It is suggested that bulk‐induced crystallization may be responsible for the formation of very small crystallites.