On the mechanism of secondary pop-out in cyclic nanoindentation of single-crystal silicon
On the mechanism of secondary pop-out in cyclic nanoindentation of single-crystal silicon
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DOI:
10.1557/jmr.2015.120
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发表时间:
2015-06-14
影响因子:
2.7
通讯作者:
Yan, Jiwang
中科院分区:
文献类型:
--
作者:
Huang, Hu;Yan, Jiwang
In cyclic nanoindentation of single-crystal silicon, an interesting phenomenon of a secondary pop-out event that closely follows the first pop- out event but with a larger critical load than the first is presented. Cyclic nanoindentation experiments under various loading/unloading rates and various maximum indentation loads were performed to verify the generality of the phenomenon of two pop- out events. Raman spectroscopy results indicate that the secondary pop- out does not induce any new phase, and the dominated end phases after the two pop- out events are still a mixture of Si-XII/Si-III phases. According to average contact pressure analysis, the phase transformation paths and the formation mechanism for the secondary pop- out event are discussed from the viewpoint of crystal nucleation and growth. The results indicate that phase transformations from the Si-I phase to Si-XII/Si-III phases are completed by two pop- out events in two adjacent indentation cycles, and the Si-XII/Si-III phases formed in previous indentation cycles strongly affect the phase transformations in subsequent loading/unloading processes.