An optical study on dislocation clusters in a slowly pulled silicon crystal
An optical study on dislocation clusters in a slowly pulled silicon crystal
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慢拉硅晶体中位错簇的光学研究
DOI：
10.1063/1.371646
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发表时间：
1999
影响因子：
3.2
通讯作者：
T. Ogawa
中科院分区：
文献类型：
--
作者：
N. Nango;S. Iida;T. Ogawa
由于慢拉CZ硅晶体的缺陷密度很低，因此监测体积的确定对于获得晶体缺陷的正确信息非常重要。在这里，体积被定义为从晶体经济质量控制的角度出发，单次监测试验所搜索的体积，体积应等于或略大于缺陷密度的倒数。接下来的两个步骤的研究导致了成功的和新颖的使用普通的红外光散射层析成像仪（LST）的目的。(1)激光注入载流子对LST的光致发光监视厚度估计为300 μm，这是由于载流子从激光照射的位置向外扩散约150 μm发出光致发光。因此，PL映射对于寻找低缺陷密度的硅晶体是非常有效的，因为像位错这样的缺陷可以作为PL杀手中心。(2)在……
Since the defect density of slowly pulled Czochralski (CZ) Si crystals is fairly low, determination of the surveillance volume is very important to get correct information about defects in the crystals. Here, the volume is defined as that to be searched by a single surveillance trial from a viewpoint of economical quality control of the crystals and should be equal to or a little larger than the reciprocal density of the defects. The following two-step investigation resulted in successful and novel use of an ordinary IR light scattering tomograph (LST) instrument for this purpose. (1) The surveillance thickness of photoluminescence (PL) due to carriers optically injected by a laser beam for LST is estimated as 300 μm in the crystal, because the carriers diffuse out emitting PL about 150 μm from the position illuminated by the laser beam. Thus PL mapping is very effective to search for low defect density silicon crystals since defects such as dislocations act as PL killer centers. (2) The dark positions in...