Antibunching Single-Photon Emission and Blinking Suppression of CdSe/ZnS Quantum Dots
Antibunching Single-Photon Emission and Blinking Suppression of CdSe/ZnS Quantum Dots
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DOI：
10.1021/nn900760u
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发表时间：
2009-10-01
期刊：
影响因子：
17.1
通讯作者：
Tang, Jau
中科院分区：
文献类型：
--
作者：
Yuan, C. T.;Yu, Pyng;Tang, Jau
我们证明，通过与银纳米棱镜的性质耦合，单个CdSe/ZnS半导体量子点（QD）表现出抑制闪烁行为，增强的荧光强度（类似于2.5倍），增加的辐射衰减速率（类似于12.5倍），和反聚束单光子发射。所有这些修改显着提高了所提出的基于胶体半导体量子点的单光子源的整体性能。
We demonstrated that by property coupling to silver nanoprisms, single CdSe/ZnS semiconductor quantum dots (QDs) exhibited suppressed blinking behavior, an enhanced fluorescence intensity (similar to 2.5 fold), increased radiative decay rates (similar to 12.5,fold), and antibunching single-photon emission. All these modifications significantly promote the overall performance of the proposed single-photon sources based on colloidal semiconductor QDs.