Large and stable piezoelectric response in Bi0.97Nd0.03FeO3 thin film
Large and stable piezoelectric response in Bi0.97Nd0.03FeO3 thin film
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DOI：
10.1063/1.4705427
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发表时间：
2012-04
影响因子：
4
通讯作者：
B. Jiang;Xiaolong Li;Hongyan Zhang;Wen Sun;Jingjing Liu;G. Hu
中科院分区：
文献类型：
--
作者：
B. Jiang;Xiaolong Li;Hongyan Zhang;Wen Sun;Jingjing Liu;G. Hu
采用金属有机物分解法在LaNiO 3 [100]/Si衬底上外延制备了BixNdxFeO 3（BNFO）（x = 0.01similar to 0.045）薄膜。在BNFOx=0.03的薄膜中可以观察到饱和的矩形P-E磁滞回线。此外，在所有的BNFO薄膜的域可以完全切换使用压电模式的原子力显微镜。更重要的是，BNFOx=0.03的膜表现出大而稳定的压电响应（类似于160 pm/V）。这是由于该薄膜具有最低的漏电流和V-O的再分布。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4705427]
BixNdxFeO3 (BNFO) (x = 0.01 similar to 0.045) films were epitaxially prepared on LaNiO3 [100]/Si substrates via a metal organic decomposition method. Well-saturated and rectangular P-E hysteresis loop can be observed in BNFOx=0.03 film. Additionally, the domains in all BNFO films can be fully switched using a piezoelectric-mode atomic force microscope. More importantly, the BNFOx=0.03 film exhibits a large and stable piezoresponse (similar to 160 pm/V). These phenomena can be ascribed to the lowest leakage current and redistribution of V-O in this film. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4705427]