Room-temperature ferromagnetism in manganese doped reduced rutile titanium dioxide thin films
Room-temperature ferromagnetism in manganese doped reduced rutile titanium dioxide thin films
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DOI：
10.1063/1.1667858
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发表时间：
2004-06-01
影响因子：
3.2
通讯作者：
Tung, L
中科院分区：
文献类型：
--
作者：
Wang, ZJ;Tang, JK;Tung, L
研究了脉冲激光沉积法在α - al2o3衬底上生长mnxti1 - xo2 - δ (x=0.02-0.12)薄膜。x射线衍射和透射电镜结果表明，该薄膜为单相还原金红石型。超导量子干涉装置磁强计测量表明，薄膜在室温下具有铁磁性，矫顽力高达170 Oe。在室温下，还原膜的饱和磁化强度高达0.83 mu(B) / Mn原子。电阻率的温度依赖性与p型载流子表现出半导体特性。讨论了p型导电的性质及其对铁磁性的意义。(C) 2004年美国物理研究所。
MnxTi1-xO2-delta (x=0.02-0.12) thin films grown on alpha-Al2O3 substrates by pulsed-laser deposition have been investigated. X-ray diffraction and transmission electron microscopy results indicate that the films are single phase and reduced rutile-type. Superconducting quantum interference device magnetometer measurements show the films are ferromagnetic at room temperature with nonzero coercivity up to 170 Oe. The saturation magnetization of the reduced films is as high as 0.83 mu(B) per Mn atom at room temperature. The temperature dependence of the resistivity shows semiconducting behavior with p-type carriers. The nature of the p-type conduction and its significance to the ferromagnetism are discussed. (C) 2004 American Institute of Physics.