PHOTOELASTIC TENSOR OF SILICON AND VOLUME DEPENDENCE OF AVERAGE GAP
PHOTOELASTIC TENSOR OF SILICON AND VOLUME DEPENDENCE OF AVERAGE GAP
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DOI：
10.1103/physrevlett.32.1196
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发表时间：
1974-01-01
影响因子：
8.6
通讯作者：
BIEGELSEN, DK
中科院分区：
文献类型：
--
作者：
BIEGELSEN, DK
首次精确测量了硅的光弹性张量的代数值。声光测量值为p1111 = - 0.094, p1122 =+ 0.017, p1212 = - 0.051。结果与基于philips - van Vechten离子理论的计算结果大相径庭。结果表明，广泛使用的描述同极平均能隙随体积变化的物质间和物质内部变化的普遍幂律假设必须重新解释或修正。
The first accurate measurements of the algebraic values of the photoelastic tensor of silicon are reported. The values, determined acousto-optically, are p 1111=− 0.094, p 1122=+ 0.017, and p 1212=− 0.051. The results are in strong disagreement with calculations based on the Phillips-Van Vechten theory of ionicity. It is shown that the widely used assumption of a universal power law describing both the intermaterial and intramaterial variations of the homopolar average energy gap with volume must be reinterpreted or revised.