InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers
InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers
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DOI：
10.1063/1.1785859
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发表时间：
2004-08
影响因子：
4
通讯作者：
Q. Gong;R. Nötzel;van Pj René Veldhoven;Tj Tom Eijkemans;J. Wolter
中科院分区：
文献类型：
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作者：
Q. Gong;R. Nötzel;van Pj René Veldhoven;Tj Tom Eijkemans;J. Wolter
本文报道了用化学束外延法在InP（100）衬底上的GaInAsP中生长InAs量子点，其发射波长在1.55μm范围内。亚单层覆盖的GaP的GaInAsP缓冲液沉积前的InAs量子点的结果在最有效的抑制作为scinP交换过程中InAs的生长和随后的生长中断下砷通量。在亚单层范围内改变差距中间层的覆盖率，实现了从1.6 μ m以上到1.5μm以下的连续波长调谐。温度依赖的光致发光揭示了不同的零维载流子限制，并表明InAs量子点是免费的缺陷和位错。
We report on the growth of InAs quantum dots (QDs) in GaInAsP on InP (100) substrates by chemical-beam epitaxy, with emission wavelength in the 1.55μm region. Submonolayer coverage of GaP on the GaInAsP buffer before deposition of the InAs QDs results in most efficient suppression of As∕P exchange during InAs growth and subsequent growth interruption under arsenic flux. Continuous wavelength tuning from above 1.6 to below 1.5μm is thus achieved by varying the coverage of the GaP interlayer within the submonolayer range. Temperature dependent photoluminescence reveals distinct zero-dimensional carrier confinement and indicates that the InAs QDs are free of defects and dislocations.