Emitter doping profiles optimization and correlation with metal contact of multi-crystalline silicon solar cells
Emitter doping profiles optimization and correlation with metal contact of multi-crystalline silicon solar cells
复制标题
多晶硅太阳能电池发射极掺杂分布优化及其与金属接触的相关性
DOI:
10.1016/j.ijleo.2016.08.120
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发表时间:
2016-01-01
期刊:
影响因子:
3.1
通讯作者:
Zhuge, Lanjian
中科院分区:
文献类型:
--
作者:
Cui, Meili;Jin, Chenggang;Zhuge, Lanjian
A systematic investigation of Phosphorus Oxychloride (POCI3) based diffusion optimization for the formation of homogeneous emitters and correlation with metal contact in p-type multi-crystalline silicon (multi-Si) solar cell is presented. The deposition temperature (810, 804, 798, 792 and 786 degrees C) was varied to achieve different sheet resistance (85, 90, 95,100, and 105 ohm/square) measured by four points probes. The correlation between emitter quality, metal contact resistance (Rc) and cell performance was investigated. The results showed, that the sheet resistance is higher, phosphorus surface concentration (Cs) is lower and emitter saturation current density Doe) is lower. The cell data showed that the higher Rsheet result in higher Voc and Isc due to better short wavelength response from the External Quantum Efficiency (EQE) measurement, but lower fill factor (FF) due to higher emitter sheet resistance and contact resistance with Ag paste. The optimal Rsheet for this type of Ag paste (Samsung SDI 8630A) in this test is 90 ohm/square with the highest cell efficiency of 18.325%. (C) 2016 Elsevier GmbH. All rights reserved.