Statistical Model for Random Telegraph Noise in Flash Memories
Statistical Model for Random Telegraph Noise in Flash Memories
复制标题
闪存中随机电报噪声的统计模型
DOI：
10.1109/ted.2007.910605
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发表时间：
2008
影响因子：
3.1
通讯作者：
A. Visconti
中科院分区：
文献类型：
--
作者：
C. Monzio Compagnoni;R. Gusmeroli;A. Spinelli;A. Lacaita;M. Bonanomi;A. Visconti
本文提出了一种新的基于物理的闪存随机电报噪声统计模型。从描述单元隧道氧化物中俘获/脱陷事件的基本马尔可夫过程的概率叠加出发，该模型可以解释随机电报噪声阈值-电压不稳定性的主要特征。对两次后续读访问之间阈值电压差的统计分布的结果表明，即使考虑分布尾部的时间漂移，测量结果与模型预测也具有很好的一致性。此外，该模型对引起随机电报噪声的氧化物缺陷进行了详细的光谱分析，允许对阈值电压不稳定过程中涉及的陷阱进行空间和能量局部化。
This paper presents a new physics-based statistical model for random telegraph noise in Flash memories. From the probabilistic superposition of elementary Markov processes describing the trapping/detrapping events taking place in the cell tunnel oxide, the model can explain the main features of the random telegraph noise threshold-voltage instability. The results on the statistical distribution of the threshold-voltage difference between two subsequent read accesses show good agreement between measurements and model predictions, even considering the time drift of the distribution tails. Moreover, the model gives a detailed spectroscopic analysis of the oxide defects responsible for the random telegraph noise, allowing a spatial and energetic localization of the traps involved in the threshold-voltage instability process.