1D Wires of 2D Layered Materials: Germanium Sulfide Nanowires as Efficient Light Emitters
1D Wires of 2D Layered Materials: Germanium Sulfide Nanowires as Efficient Light Emitters
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DOI：
10.1021/acsanm.7b00053
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发表时间：
2017-12
期刊：
影响因子：
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通讯作者：
E. Sutter;P. Sutter
中科院分区：
文献类型：
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作者：
E. Sutter;P. Sutter
我们考虑从二维（2D）层状材料GeS形成一维（1D）纳米线。通过低温气-液-固工艺在Au催化剂上生长，得到典型直径为100 nm且长度超过10 μm的单晶纳米线，其由结晶GeS核心组成，沿着纳米线轴沿着分层，被具有较大带隙的富硫GeSx壳包围，该壳提供纳米线的化学和电子钝化。结合变温原位电子显微镜，化学映射，和单纳米线阴极发光光谱被用来揭示生长过程中的关键要素，并确定GeS/GeSx核壳纳米线的光电性能。我们的研究结果表明，气-液-固过程可以很容易地从传统的三维晶体扩展到一维线的生长从二维层状晶体，并可能提供新的低维材料的电子，光学和电子器件。
We considered the formation of one-dimensional (1D) nanowires from the two-dimensional (2D) layered material GeS. Growth by a low-temperature vapor–liquid–solid process over a Au catalyst gives rise to single-crystalline nanowires with typical diameters of ∼100 nm and length exceeding 10 μm that consist of a crystalline GeS core with layering along the nanowire axis, surrounded by an ultrathin, sulfur-rich GeSx shell with larger bandgap that provides chemical and electronic passivation of the nanowires. Combined variable-temperature in situ electron microscopy, chemical mapping, and single-nanowire cathodoluminescence spectroscopy are used to uncover key elements of the growth process and to identify the optoelectronic properties of the GeS/GeSx core–shell nanowires. Our results suggest that vapor–liquid–solid processes can readily be extended from conventional three-dimensional crystals to the growth of 1D wires from 2D layered crystals and may provide novel low-dimensional materials for electronic, opto...