Modeling crystal growth in a diffusion field using fully faceted interfaces
Modeling crystal growth in a diffusion field using fully faceted interfaces
复制标题
使用全刻面界面模拟扩散场中的晶体生长
DOI：
10.1006/jcph.1994.1153
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发表时间：
1994
影响因子：
4.1
通讯作者：
Jean E. Taylor
中科院分区：
文献类型：
--
作者：
A. Roosen;Jean E. Taylor
摘要本文提出了一种新的晶体生长计算模型，该模型明确地跟踪了液体和固体之间的界面，但通过假设晶体是具有有限数目的可能法线方向的多边形，简化了曲率的测量。这种方法有几个优点。与“相场”算法相比，涉及界面运动的计算相对较快，但与许多“曲线跟踪”方法不同，它很容易检测和进行拓扑变化。描述了计算算法，包括用于“粉碎”界面边缘的方法。物理（表面能，流动性）和非物理（网格尺寸）计算参数的变化的影响进行了研究，并产生与理论相一致的结果。
Abstract We present a new computational model of crystal growth, in which the interface between liquid and solid is explicitly tracked, but the measurement of curvature is simplified through the assumption that the crystal is a polygon having a limited number of possible normal directions. This method has several advantages. Computations involving the motion of the interface are relatively fast as compared to "phase field" algorithms but, unlike many "curve tracking" methods, it is easy to detect and make topological changes. The computational algorithm is described, including a method for "shattering" interface edges. The effects of variations of both physical (surface energy, mobility) and non-physical (mesh size) computational parameters have been investigated and produce results consistent with theory.