Observation of the hysteresis behavior of pentacene thin-film transistors in I-V and C-V measurements
Observation of the hysteresis behavior of pentacene thin-film transistors in I-V and C-V measurements
复制标题
并五苯薄膜晶体管在 I-V 和 C-V 测量中滞后行为的观察
DOI：
10.1149/1.2363950
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发表时间：
2007
影响因子：
--
通讯作者：
H. Baik
中科院分区：
文献类型：
--
作者：
W. Kim;Chang Su Kim;S. Jo;S. Lee;Se Jong Lee;H. Baik
通过对有机薄膜晶体管(OTFT)的电流-电压和电容-电压的测量，观察了不同表面处理对栅电介质表面状态的影响。六甲基二硅氮烷(HMDS)处理的OTFTs介电表面上的羟基较少，与其他表面处理的OTFTs相比，表现出较小的滞后行为。特别是，当施加正的栅偏压(对于耗尽态)时，观察到更多的滞后，这表明栅电介质上的OH基团负责在沟道中捕获电子。然而，当表面用(CH3)3-Si封端时，通过HMDS处理消除了OH基团，在正方向上观察到的滞后要小得多。因此，对于OTFTs更稳定的运行来说，显然无OH表面是可取的。
Current-voltage and capacitance-voltage measurements of the organic thin-film transistors (OTFTs) were performed to observe the change of the surface state of gate dielectrics using various surface treatments. The hexamethyldisilazane (HMDS)-treated OTFTs, which has few OH groups on the dielectric surface, showed little hysteresis behavior than that of other surface-treated OTFTs. In particular, when the positive gate bias (for a depletion state) was applied, more hysteresis was observed, indicating that OH groups on a gate dielectric are responsible for the electron trapping in the channel. However, when the surface is terminated with (CH 3 ) 3 -Si, eliminating OH groups by HMDS treatment, much less hysteresis was observed in the positive direction. Therefore, it seems apparent that an OH-free surface is desirable for a more stable operation of OTFTs.