Results from the first prototype of large 3D active edge sensors

Results from the first prototype of large 3D active edge sensors
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大型 3D 主动边缘传感器第一个原型的结果

DOI:
10.1109/nssmic.2011.6154334
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发表时间:
2011
期刊:
2011 IEEE Nuclear Science Symposium Conference Record
影响因子:
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通讯作者:
A. Summanwar
A. Summanwar
中科院分区:
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文献类型:
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作者:
A. Kok;M. Boscardin;G. Betta;C. D. Vià;G. Darbo;C. Fleta;T. Hansen;J. Hasi;C. Kenney;N. Lietaer;M. Lozano;Sherwood Parker;G. Pellegrini;A. Summanwar

文献摘要

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三维有源边缘传感器具有抗辐射、无边缘能力等优点。利用深反应离子刻蚀和晶片键合技术,在SINTEF MiNaLab上成功地制作了18.5×20.5 mm~2的有源边缘3D探测器。这些传感器与ATLAS FE-I4读出电子设备兼容。介绍了制作工艺和难点,并对初步的电学测量进行了讨论。
3D active edge sensors have advantages such as radiation hardness and edgeless capability. With the use of deep reactive ion etching and wafer bonding, 18.5 by 20.5 mm2 3D detectors with active edges have been successfully fabricated at SINTEF MiNaLab. These sensors are compatible with the ATLAS FE-I4 readout electronics. Fabrication process and difficulties are presented and the preliminary electrical measurements are also discussed.