TiO2 Nanowire Array Memristive Devices Emulating Functionalities of Biological Synapses
TiO2 Nanowire Array Memristive Devices Emulating Functionalities of Biological Synapses
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DOI：
10.1002/aelm.202000950
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发表时间：
2021-01
影响因子：
6.2
通讯作者：
C. Ebenhoch;L. Schmidt‐Mende
中科院分区：
文献类型：
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作者：
C. Ebenhoch;L. Schmidt‐Mende
忆阻器被认为是生物突触的电子孪生兄弟。它们能够模拟人类的记忆功能，如学习、记忆和遗忘。目前的水热生长的二氧化钛纳米线阵列记忆器件已经被证明能够模拟突触行为。此外，还介绍了纳米线阵列的尖峰率相关可塑性、兴奋性突触后电流和成对脉冲便利化、高耐受性和开/关比。用Kohlrausch方程对突触后电流的衰减进行拟合，表明寿命从几毫秒到几百秒，提供了从短期记忆到长期记忆转变的可能性。此外，观察到信号的寿命与刺激脉冲的频率和幅度有很强的相关性。
Memristors are deemed to be the electrical twin to biological synapses. They enable emulation of human memory functionalities such as learning, memorizing, and forgetting. The present hydrothermally grown titanium dioxide nanowire array memristive devices have shown to be able to mimic synaptic behaviors. As well as spike‐rate dependent plasticity, excitatory postsynaptic currents, and paired pulse facilitation, high endurance, and on/off ratios for the nanowire arrays are presented. Decay fitting of postsynaptic currents with Kohlrausch's equation shows lifetimes of few milliseconds up to several hundred seconds, offering the possibility of a short‐term to long‐term memory transition. Furthermore, a strong dependence of the lifetime of the signals on the frequency and amplitude of the stimulation pulses is observed.