Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
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DOI：
10.1109/led.2019.2931404
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发表时间：
2019-07
影响因子：
4.9
通讯作者：
S. Baik;Hyeokjin Kwon;Chuck Paeng;He Zhang;B. Kalkofen;J. E. Jang;Y. S. Kim;Hyuk-Jun Kwon
中科院分区：
文献类型：
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作者：
S. Baik;Hyeokjin Kwon;Chuck Paeng;He Zhang;B. Kalkofen;J. E. Jang;Y. S. Kim;Hyuk-Jun Kwon
为了在锗（Ge）上实现超过${1} \x {10}^{{20}}$ cm-3的高浓度掺杂剂，提出并研究了通过等离子体辅助原子层沉积（PALD）共掺杂磷（P）和锑（Sb）以及随后的退火工艺[快速热退火工艺（RTP）或闪光灯退火工艺（FLP）]。我们发现，PALD堆叠共掺杂（POx/SiOy和Sb 2 O 5）薄膜均匀沉积。使用常规RTP方法导致低掺杂浓度（$）。然而，使用氙气（氙灯）灯（灯持续时间：3 ms;能量密度：56 J/cm 2）的FLP将表面温度升高至近800 °C。此外，在表面处实现了高浓度的P和Sb（$> 1 × 10^{{20}} cm ^{-{3}}$）。我们的研究结果表明，在短时间内（~ 3 ms）具有高能量的FLP可以产生峰值功率效应和共掺杂效应。证据表明，这些效应有助于提高Ge结构中的n型掺杂水平。
To achieve a high concentration of dopants over ${1} \times {10}^{{20}}$ cm−3 on germanium (Ge), co-doping with phosphorus (P) and antimony (Sb) by plasma assisted atomic layer deposition (PALD) and a subsequent annealing process [rapid thermal annealing process (RTP) or flash lamp annealing process (FLP)] are proposed and investigated. We found that the PALD stacked co-doping (POx/SiOy and Sb2O5) films were uniformly deposited. Using the conventional RTP method led to a low doping concentration ( $ ). However, FLP with a Xenon (Xe) lamp (lamp duration: 3 ms; energy density: 56 J/cm2) raised the surface temperature to nearly 800 °C. Furthermore, high concentrations of both P and Sb ( $> 1\times 10^{{20}}\mathrm {cm}^{-{3}}$ ) were achieved at the surface. Our findings suggest that the FLP with high energy in a short amount of time (~3ms) can create the peak power effect and the co-doping effect. The evidence shows that these effects contribute to enhancing n-type doping levels in the Ge structure.