Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon.
Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon.
复制标题
DOI：
10.1364/ol.401042
复制
发表时间：
2020-09
期刊：
影响因子：
3.6
通讯作者：
Ying Lu;Victoria Cao;M. Liao;Wei Li;M. Tang;Ang Li;P. Smowton;A. Seeds;Huiyun Liu;Siming Chen
中科院分区：
文献类型：
--
作者：
Ying Lu;Victoria Cao;M. Liao;Wei Li;M. Tang;Ang Li;P. Smowton;A. Seeds;Huiyun Liu;Siming Chen
高功率、宽带量子点 (QD) 超发光二极管 (SLD) 是光学相干断层扫描 (OCT) 成像系统的理想光源，但以前主要在原生 GaAs 或 InP 基基板上制造。最近，在将 QD SLD 从天然衬底迁移到硅衬底方面取得了重大进展。在这里，我们展示了在硅衬底上单片生长的电泵浦连续波 InAs QD SLD，由于实现了 III-V 族外延层中的低缺陷密度，其性能显着提高。所制造的窄脊波导器件在室温下表现出以 O 波段为中心的 103 nm 发射光谱的最大 3 dB 带宽以及 3.8 mW 的最大单面输出功率。硅基 SLD 已在 OCT 系统中应用进行了评估。在优化条件下，预测的轴向分辨率为 ∼5.3μm，相应的输出功率为 0.66 mW/facet。
High-power, broadband quantum-dot (QD) superluminescent diodes (SLDs) are ideal light sources for optical coherence tomography (OCT) imaging systems but have previously mainly been fabricated on native GaAs- or InP-based substrates. Recently, significant progress has been made to emigrate QD SLDs from native substrates to silicon substrates. Here, we demonstrate electrically pumped continuous-wave InAs QD SLDs monolithically grown on silicon substrates with significantly improved performance thanks to the achievement of a low density of defects in the III-V epilayers. The fabricated narrow-ridge-waveguide device exhibits a maximum 3 dB bandwidth of 103 nm emission spectrum centered at the O-band together with a maximum single facet output power of 3.8 mW at room temperature. The silicon-based SLD has been assessed for application in an OCT system. Under optimized conditions, a predicted axial resolution of ∼5.3µm is achieved with a corresponding output power of 0.66 mW/facet.