Residual resistivity of diluted III–V magnetic semiconductors
Residual resistivity of diluted III–V magnetic semiconductors
复制标题
稀释的 III-V 族磁性半导体的残余电阻率
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
P. Weinberger
中科院分区：
文献类型：
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作者：
I. Turek;J. Kudrnovský;V. Drchal;P. Weinberger
利用线性松饼-锡轨道法、相干势近似和Kubo-Greenwood线性响应理论，从第一性原理出发，计算了稀释（Ga, Mn）As磁性半导体的电子结构和剩余电阻率。特别注意了原生补偿缺陷的作用，如as对位和Mn间隙，以及局部Mn矩的不同磁构型。计算得到的电阻率的数量级与现有的实验数据相当吻合。电阻率的浓度变化反映了杂质散射强度和载流子数量两种基本机制。与最近的一项实验一致，计算出的电阻率与用经典海森堡哈密顿量计算的合金居里温度密切相关。
The electronic structure and residual resistivity of diluted (Ga, Mn)As magnetic semiconductors are calculated from first principles using the linear muffin-tin orbital method, the coherent potential approximation, and the Kubo–Greenwood linear response theory. Particular attention is paid to the role of native compensating defects such as As antisites and Mn interstitials as well as to different magnetic configurations of the local Mn moments. The order of magnitude of the calculated resistivities compares reasonably well with available experimental data. The concentration variations of the resistivity reflect two basic mechanisms, namely the strength of the impurity scattering and the number of carriers. In agreement with a recent experiment, the calculated resistivities are strongly correlated with the alloy Curie temperatures evaluated in terms of a classical Heisenberg Hamiltonian.