Oxidation behavior of titanium nitride films
Oxidation behavior of titanium nitride films
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DOI：
10.1116/1.1914815
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发表时间：
2005-07-01
影响因子：
2.9
通讯作者：
Lu, FH
中科院分区：
文献类型：
--
作者：
Chen, HY;Lu, FH
用X射线衍射、拉曼散射光谱和场发射扫描电子显微镜研究了氮化钛（TiN）薄膜的氧化行为。采用阴极电弧等离子体沉积技术在Si基片上沉积TiN薄膜。之后，将膜在空气中在500-800摄氏度下退火2小时。X射线衍射谱表明，在600 ℃以上出现金红石-TiO 2。TiO 2的相对强度随着温度的升高而迅速增加。在700摄氏度以上只检测到金红石型TiO 2。拉曼散射光谱表明在500 ℃以上存在金红石-TiO 2信号。同时，在拉曼光谱中，在700 ℃处出现额外的Si峰，在该温度以上仅出现Si峰。场发射扫描电子显微镜观察发现，在600 ~ 700 ℃退火的薄膜表面存在大量的纳米孔，而在800 ℃退火的薄膜表面则存在颗粒状结构。沉积态TiN薄膜具有明显的柱状结构。在500 ℃时出现薄而致密的氧化物覆盖层，而在600 ℃以上存在较厚的氧化物覆盖层。在800 ℃时，薄膜中存在着细长的晶粒结构和大量的空洞.这些孔隙-空隙可能是由氮化物氧化过程中的氮释放引起的。氧化层明显向内生长，表明TiN膜的氧化属于向内氧化。氧化反应的指前因子和活化能由Arrhenius型关系求得。这些值为2.2 × 10（-6）cm（2）/s和110 +/- 10 kJ/mol，与文献中的报告一致。(c)2005年美国真空学会。
The oxidation behavior of titanium nitride (TiN) films has been investigated by using x-ray diffraction, Raman scattering spectroscopy, and field emission scanning electron microscopy. TiN films were deposited onto Si substrates by using cathodic arc plasma deposition technique. After that, the films were annealed in the air at 500-800 degrees C for 2 h. The x-ray diffraction spectra showed that rutile-TiO2 appeared above 600 degrees C. The relative intensity of TiO2 rapidly increased with temperatures. Only rutile-TiO2 was detected above 700 degrees C. Raman scattering spectra indicated the presence of rutile-TiO2 signals above 500 degrees C. Meanwhile an additional Si peak appeared at 700 degrees C in Raman spectra, above which only Si peak appeared. Many nano pores were found on the surface of films annealed at temperatures between 600 and 700 degrees C in field emission scanning electron microscopy, while the granular structure existed at 800 degrees C. The as-deposited TiN films had an apparent columnar structure. The thin and dense oxide overlayer appeared at 500 degrees C, and thicker oxide layer existed above 600 degrees C. The elongated grain structure with many voids existed in the film at 800 degrees C. These pores-voids might result from the nitrogen release during the oxidation of the nitride. The oxide layer obviously grows inward indicating the oxidation of TiN films belongs to an inward oxidation. The pre-exponential factor and the activation energy of the oxidation were evaluated by Arrhenius-type relation. These values were 2.2 X 10(-6) cm(2)/s and 110 +/- 10 kJ/mol, which are consistent with those reports in the literature. (c) 2005 American Vacuum Society.