Multiphonon Nonradiative Recombination due to Successive Electron and Hole Capture by a Deep-Level Defect in Semiconductors
Multiphonon Nonradiative Recombination due to Successive Electron and Hole Capture by a Deep-Level Defect in Semiconductors
复制标题
半导体深层缺陷连续捕获电子和空穴引起的多声子非辐射复合
DOI：
10.1103/physrevlett.47.1333
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发表时间：
1981
影响因子：
8.6
通讯作者：
H. Sumi
中科院分区：
文献类型：
--
作者：
H. Sumi
计算了深能级缺陷首先俘获注入的少数载流子，然后俘获多数载流子的多声子发射的非辐射复合率。在许多情况下，第二次捕获发生在非常短的时间内，声子周期的顺序，在晶格弛豫向一个新的平衡配置触发的第一次捕获。该机制给出了一个所谓的杀手中心的模型，无法通过测量被困载流子检测到。
A rate is calculated of nonradiative recombination in which a deep-level defect captures first an injected minority carrier and then a majority one by multiphonon emission. In many cases the second capture occurs in a very short time, of the order of a phonon period, during lattice relaxation toward a new equilibrium configuration triggered by the first capture. The mechanism gives a model of the so-called killer centers which cannot be detected by measurements of trapped carriers.