Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal

Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal
复制标题

DOI：
10.1143/jjap.46.l596
复制
发表时间：
2007-06-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
影响因子：
--
通讯作者：
Iwasa, Yoshihiro
Iwasa, Yoshihiro
中科院分区：
其他
文献类型：
--
作者：
Bisri, Satria Zulkarnaen;Takahashi, Tetsuo;Iwasa, Yoshihiro

文献摘要

被引文献

相似文献

成功地制备了一种基于1，3，6，8-四苯基芘（TPPy）单晶的双极型场效应晶体管（FET）。采用几种金属电极研究了单晶FET的电荷注入特性。使用Au和Ca电极分别实现了0.34和7.7 × 10（-2）cm（2）/（V中心点s）的空穴和电子迁移率。该器件的双极特性为发光场效应晶体管的进一步发展提供了前景。
An ambipolar field-effect transistor (FET) based on a 1,3,6,8-tetraphenylpyrene (TPPy) single crystal, a highly photoluminescent material, has been successfully fabricated. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics into the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 x 10(-2) cm(2)/(V center dot s) were achieved using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.