Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs
Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs
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DOI：
10.1109/ted.2005.854269
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发表时间：
2005-08
影响因子：
3.1
通讯作者：
M. Noborio;Y. Kanzaki;Jun Suda;T. Kimoto
中科院分区：
文献类型：
--
作者：
M. Noborio;Y. Kanzaki;Jun Suda;T. Kimoto
本文对4H-SiCMOSFET的短沟效应进行了基础性研究。在p型4H-SiC(0001)、(0001)和(1120)面上制备了不同沟道长度的平面型MOSFET。在制作的MOSFET中，随着沟道长度的减小，出现穿透行为、阈值电压降低、亚阈值特性恶化和跨导饱和等现象。通过器件模拟，分析了临界沟道长度随p体掺杂和氧化层厚度的变化规律。由器件模拟得到的临界沟道长度与硅MOSFET的经验公式符合得很好。制作的SiCMOSFET的临界沟道长度略长于模拟结果。几乎没有观察到晶面取向对SCES的依赖性。讨论了界面电荷对超临界流体力学性能的影响。
In this paper, a fundamental investigation on short-channel effects (SCEs) in 4H-SiC MOSFETs is given. Planar MOSFETs with various channel lengths have been fabricated on p-type 4H-SiC (0001), (0001) and (1120) faces. In the fabricated MOSFETs, SCEs such as punchthrough behavior, decrease of threshold voltage, deterioration of subthreshold characteristics, and saturation of transconductance occur by reducing channel length. The critical channel lengths below which SCEs occur are analyzed as a function of p-body doping and oxide thickness by using device simulation. The critical channel lengths obtained from the device simulation is in good agreement with the empirical relationship for Si MOSFETs. The critical channel lengths in the fabricated SiC MOSFETs are slightly longer than simulation results. The dependence of crystal face orientations on SCEs is hardly observed. Impacts of interface charge on the appearance of SCEs are discussed.