High‐Quality Monolayer Reduced Graphene Oxide Films via Combined Chemical Reduction and Ethanol‐Assisted Defect Restoration
High‐Quality Monolayer Reduced Graphene Oxide Films via Combined Chemical Reduction and Ethanol‐Assisted Defect Restoration
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DOI：
10.1002/admi.202200503
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发表时间：
2022-05
影响因子：
5.4
通讯作者：
K. K. H. De Silva-K.;Kazuma Shibata;Pamarti Viswanath;Hsin-Hui Huang;M. Yoshimura
中科院分区：
文献类型：
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作者：
K. K. H. De Silva-K.;Kazuma Shibata;Pamarti Viswanath;Hsin-Hui Huang;M. Yoshimura
本文介绍了一种简单的两步还原方法来制备具有优异结构质量的还原氧化石墨烯（RGO）薄膜。许多人尝试制造具有类似原始石墨烯的高结构质量的还原氧化石墨烯。然而，设计一种还原方法以更有效地获得高质量的RGO是非常可取的。为了解决这个问题，在目前的工作中，单层氧化石墨烯薄膜首先在几分钟内使用氢碘酸和三氟乙酸蒸汽的混合物进行化学还原。其次，用乙醇在800°C下加热还原30分钟，以修复晶格空位。通过这种方法，作者成功地获得了具有高结构质量和接近原始石墨烯的电学性能的RGO。拉曼光谱结果表明，这些RGO薄膜具有非常低的ID/IG比（0.34）和高的IG′/IG比（1.34），并且由于缺陷之间的距离大（21 nm）和晶粒尺寸大（56 nm），具有明显的拉曼峰。此外，这些单层还原氧化石墨烯薄膜具有高透明度（90%）和非常低的片电阻（0.46 kΩ sq−1）。目前通用的两步还原策略被认为在制造具有高结构质量的RGO方面提供了实际的进步，作为生产石墨烯基电子器件的一种手段。
Here, a facile two‐step reduction method is introduced to fabricate reduced graphene oxide (RGO) films with remarkable structural qualities. Many attempts are made to fabricate RGO with high structural qualities resembling pristine graphene. However, designing a reduction method to obtain high‐quality RGO more productively is highly desirable. To address this matter, in the present work, monolayer graphene oxide films are, at first, chemically reduced using a mixture of hydroiodic acid and trifluoroacetic acid vapor within a few minutes. Second, the films are reduced thermally at 800 °C for 30 min with ethanol, to repair the lattice vacancies. Through this method, the authors succeeded in obtaining RGO with high structural quality and electrical properties approaching pristine graphene. Raman spectroscopic results show that these RGO films have a very low ID/IG ratio (0.34), a high IG′/IG ratio (1.34), and sharp Raman peaks, which attribute to a large distance between defects (21 nm) and large crystallite size (56 nm). Further, these monolayer RGO films have high transparency (90%) and very low sheet resistance (0.46 kΩ sq−1). The present versatile two‐step reduction strategy is considered to provide practical advancements in fabricating RGO with high structural quality, as a means to produce graphene‐based electronic devices.