Electrically controllable surface magnetism on the surface of topological insulators.
Electrically controllable surface magnetism on the surface of topological insulators.
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DOI：
10.1103/physrevlett.106.097201
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发表时间：
2010-10
影响因子：
8.6
通讯作者：
Jia-Ji Zhu;D. Yao;Shoucheng Zhang;Kai Chang
中科院分区：
文献类型：
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作者：
Jia-Ji Zhu;D. Yao;Shoucheng Zhang;Kai Chang
我们从理论上研究了三维拓扑绝缘体表面磁性杂质之间以螺旋狄拉克电子为媒介的RKKY相互作用。精确的解析表达式表明，RKKY相互作用由类Heisenberg项、类Ising项和类Dzyaloshinskiii-Moriya（DM）项组成.这为我们提供了一种新的表面磁性电调控方法。掺杂磁性离子打开的差距可导致短程Bloembergen-Rowland相互作用。海森堡项、伊辛项和DM项之间的竞争导致了不同晶格上丰富的自旋组态和反常的霍尔效应。
We study theoretically the RKKY interaction between magnetic impurities on the surface of three-dimensional topological insulators, mediated by the helical Dirac electrons. Exact analytical expression shows that the RKKY interaction consists of the Heisenberg-like, Ising-like, and Dzyaloshinskii-Moriya (DM)-like terms. It provides us a new way to control surface magnetism electrically. The gap opened by doped magnetic ions can lead to a short-range Bloembergen-Rowland interaction. The competition among the Heisenberg, Ising, and DM terms leads to rich spin configurations and an anomalous Hall effect on different lattices.