Observation of the Ga Self-Interstitial Defect in GaP
Observation of the Ga Self-Interstitial Defect in GaP
复制标题
GaP中Ga自填隙缺陷的观察
DOI：
10.1557/proc-104-449
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发表时间：
1987
期刊：
影响因子：
--
通讯作者：
K. M. Lee
中科院分区：
文献类型：
--
作者：
K. M. Lee
报道了在生长半导体中发现孤立自间隙缺陷的第一个实验证据。在GaP[0]中观察到的光学检测磁共振谱被确定为由Ga自间隙产生的。大的各向同性超细分裂(g = 2.003 (3)， A(69 Ga) = 741（5)×10−4 cm−1和A(71 Ga) -941[5]×10−4 cm−1）表明，在td对称位置的单个Ga原子是缺陷的中心。间隙性是由理论考虑确定的。自旋依赖的复合过程归因于涉及Ga ++态的非辐射供体-受体对过程，该过程与o -供体的辐射（Odeg; -a°）对过程和电子捕获过程相竞争。
The first experimental evidence of an isolated self-interstitial defect in an as-grown semiconductor is reported. An optically detected magnetic resonance spectrum observed in GaP [0] was identified as arising from a Ga selfinterstitial. The large isotropic hyperfine splittings (g = 2.003 (3), A( 69 Ga) = 741(5)×10 −4 cm −1 and A( 71 Ga) -941[5]×10 − 4 cm −1 ) revealed that a single Ga atom at a Td-symmetric site is the center of the defect. The interstitial nature is established by theoretical considerations. The spin dependent recombination process is attributed to a non-radiative donor-acceptor-pair process involving the Ga ++ state which is in competition with a radiative (Odeg; - A° ) pair process and an electron capture process at O-donor.