Toward Single-Layer Uniform Hexagonal Boron Nitride-Graphene Patchworks with Zigzag Linking Edges
Toward Single-Layer Uniform Hexagonal Boron Nitride-Graphene Patchworks with Zigzag Linking Edges
复制标题
具有锯齿形连接边缘的单层均匀六方氮化硼-石墨烯拼凑物
DOI：
10.1021/nl4021123
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发表时间：
2013-07-01
期刊：
影响因子：
10.8
通讯作者：
Liu, Zhongfan
中科院分区：
文献类型：
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作者：
Gao, Yabo;Zhang, Yanfeng;Liu, Zhongfan
杂化的六方氮化硼（h-BN）和石墨烯原子层由于其不同寻常的电子性质（Ci， L. J.; et al.），在P. M. Ajayan等人在铜箔上的开创性工作之后引起了极大的关注。自然科学，2010,9,430-435)。然而，许多基本问题仍然不清楚，包括平面内原子连续性以及杂化h-BN和石墨烯畴边界的边缘类型。为了澄清这些问题，我们通过两步补片生长方法，在选定的Rh（111）衬底上成功地生长了一个完美的单层h- bn -石墨烯（BNC）补片。有了理想的样品，我们相信在平面内连接界面，石墨烯和氢氮化硼可以在原子尺度上完美连接。更重要的是，我们发现原子尺度的扫描隧道显微镜图像证明了锯齿形连接边的形成，这也通过密度泛函理论计算在理论上得到了验证。我们认为，实验和理论工作对于获得对BNC混合的基本理解以及建立针对高性能电子和自旋电子器件的故意结构和控制具有特别重要的意义。
The atomic layer of hybridized, hexagonal boron nitride (h-BN) and graphene has attracted a great deal of attention after the pioneering work of P. M. Ajayan et al. on Cu foils because of their unusual electronic properties (Ci, L. J.; et al. Nat. Mater. 2010, 9, 430-435). However, many fundamental issues are still not clear, including the in-plane atomic continuity as well as the edge type at the boundary of hybridized h-BN and graphene domains. To clarify these issues, we have successfully grown a perfect single-layer h-BN-graphene (BNC) patchwork on a selected Rh(111) substrate, via a two-step patching growth approach. With the ideal sample, we convinced that at the in-plane linking interface, graphene and h-BN can be linked perfectly at an atomic scale. More importantly, we found that zigzag linking edges were preferably formed, as demonstrated by atomic-scale scanning tunneling microscopy images, Which was also theoretically verified using density functional theory calculations. We believe the experimental and theoretical works are of particular importance to obtain a fundamental understanding of the BNC hybrid and to establish a deliberate structural, control targeting high-performance electronic and spintronic devices.