Electrostatic properties of organic monolayers on silicon oxides studied by Kelvin probe force microscopy

Electrostatic properties of organic monolayers on silicon oxides studied by Kelvin probe force microscopy
复制标题

用开尔文探针力显微镜研究氧化硅上有机单层的静电特性

DOI:
--
复制
发表时间:
2012
期刊:
Jpn. J. Appl. Phys
影响因子:
--
通讯作者:
L.Nguyen and H.Tada
L.Nguyen and H.Tada
中科院分区:
--
文献类型:
--
作者:
R. Mishima;L.Nguyen and H.Tada

文献摘要

相似文献